| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of enhancing the capacitance by increasing the surface area of the capacitor. CONSTITUTION: The first interlayer dielectric(22) having a via hole is formed on a lower metal wiring(21). A diffusion barrier layer(23) is formed on the via hole. A dielectric film(24a) is formed on the diffusion barrier layer. An upper electrode(26a) is formed on the dielectric film, thereby forming a capacitor(20). An upper metal wiring(27) is filled into the via hole. The second interlayer dielectric(29) having a contact hole is formed on the resultant structure. A plug(30) is formed in the contact hole, and an electrode pad(31) is formed to connect the plug.
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