METHOD FOR MANUFACTURING NON-SALICIDE TRANSISTOR

摘要

PURPOSE: A method for manufacturing a non-salicide transistor is provided to be capable of simplifying manufacturing process without using an additional mask process for forming a salicide layer. CONSTITUTION: A BN+(Buried N+) diffusing layer(104) and a BN(Buried N) oxide layer(106) are selectively and sequentially formed on the predetermined portion of a substrate(102). After sequentially forming a gate oxide layer(108) and a gate electrode(110) on the substrate, a spacer(112) is formed at both sidewall of the gate electrode. A source/drain region(114) are formed on the substrate by implanting doped dopants. After depositing salicide material on the resultant structure, salicide layers(116a,116b) are selectively formed on the gate electrode and source/drain region by carrying out a heat treatment.