| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the dishing phenomenon of an isolation layer by carrying out a two-step process when flatly forming the isolation layer. CONSTITUTION: After forming a silicon nitride layer(12) on a semiconductor substrate(11), a plurality of trenches are formed in the resultant structure by selectively etching the silicon nitride layer and semiconductor substrate. An isolation layer(15) is completely filled into the trenches by depositing the isolation layer enough on the entire surface of the resultant structure. The isolation layer is firstly removed by using a CMP(Chemical Mechanical Polishing) process. Then, the isolation layer is secondly removed by using a dry etching process for exposing the silicon nitride layer. Preferably, the isolation layer has a thickness of 10000 angstrom, or less.
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