| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the crack of a metal line exposed in a contact hole and restraining the increase of contact resistance by improving a cleaning process. CONSTITUTION: The first cleaning solution is spread over a semiconductor substrate for removing pattern residuals of a photoresist layer and photosensitive polymer material(S11). The second cleaning solution is spread over the semiconductor substrate for removing the remaining first cleaning solution(S12). The third cleaning solution is spread over the semiconductor substrate for removing the remaining first and second solution(S13). Preferably, the semiconductor substrate is rotated at the speed of 35-300, 50-300, and 100-300 rpm when spreading the first, second, and third cleaning solution, respectively. Preferably, an organic solution containing hydroxy amine, methanol or iso propyl alcohol, deionized water are used as the first, second, and third cleaning solution, respectively.
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