| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of preventing oxidation of a TiN plug by using a TaN layer as a passivation layer. CONSTITUTION: Bit lines(13) are formed on a semiconductor substrate(11). A TiN plug(15) is formed between the bit lines. An etch stop layer(17), a core insulating layer(19) and a hard mask are sequentially formed on the resultant structure. The hard mask and the core insulating layer are selectively etched. After removing the hard mask, a trench is formed to expose the TiN plug(15) by etching the exposed etch stop layer. A TaN layer(25) as a passivation layer and a ruthenium film(27) are sequentially formed on the resultant structure, thereby forming a concave storage electrode(29). A ferroelectric film(31) and a plate electrode(33) are sequentially formed on the resultant structure.
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