| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to be capable of preventing the damage of a buffer oxide layer and restraining the short between a gate line and a bit line by directly forming a spacer nitride layer at the sidewall of the gate line. CONSTITUTION: A plurality of gate lines(125) made of a gate electrode(110) and a hard mask(120), are formed on the upper portion of a semiconductor substrate(100), wherein the semiconductor substrate includes a predetermined lower structure. After carrying out a gate light oxidation on the resultant structure, a gate buffer oxide layer(130) is deposited on the entire surface of the resultant structure. After forming a photoresist pattern on the resultant structure, the gate buffer oxide layer is partially removed by selectively etching the resultant structure by using the photoresist pattern as an etch stop layer. After removing the photoresist pattern, a gate spacer(180) is formed by sequentially depositing a spacer nitride layer(160) and a spacer oxide layer(170).
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