| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of improving the stability of data lines and preventing the degradation of devices. CONSTITUTION: After forming an insulating layer(22) on a semiconductor substrate(21), a contact hole is formed by selectively etching the insulating layer. A titanium film and a titanium silicide layer(25) are simultaneously formed on the insulating layer(22) and at the bottom of the contact hole, respectively by CVD(Chemical Vapor Deposition) using a heater for controlling temperature. After removing the titanium film without reacting the substrate, a barrier layer(26) and a conductive thin film(27) are sequentially formed on the resultant structure including the contact hole.
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