METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving contact resistance of a p-type source/drain by using 49BF2 ions in ion-implantation processing. CONSTITUTION: The first dopants containing fluorine and boron are implanted into a p-type source/drain region(29) of a silicon substrate(21). A contact hole is formed to expose the p-type source/drain region(29) through an interlayer dielectric(30). The second dopants are additionally implanted into the exposed p-type source/drain region(29). At this time, the second dopants contain a low percentage of fluorine compared to the first dopants.