发明名称 |
Anti-charging layer for beam lithography and mask fabrication |
摘要 |
This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.
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申请公布号 |
US6586158(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20010864384 |
申请日期 |
2001.05.25 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
DOBISZ ELIZABETH;DRESSICK WALTER J.;BRANDOW SUSAN L.;CHEN MU-SAN |
分类号 |
G03C5/04;G03C7/04;G03F7/09;G03F7/16;(IPC1-7):G03F7/00;G03C5/00;G03C5/58 |
主分类号 |
G03C5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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