发明名称 |
Anti-spacer structure for improved gate activation |
摘要 |
A method and structure for improving the gate activation of metal oxide semiconductor field effect transistor (MOSFET) structures are provided. The method of the present invention includes the steps of forming a structure having a plurality of patterned gate stacks atop a layer of gate dielectric material; forming a non-conformal film on the structure including the plurality of patterned gate stacks; blocking some of the plurality of patterned gate stacks with a first resist, while leaving other patterned gate stacks of said plurality unblocked; implanting first ions into the unblocked patterned gate stacks; removing the first resist and blocking the previously unblocked patterned gate stacks with a second resist; implanting second ions into the patterned gate stacks that are not blocked by the second resist; and removing the second resist and the non-conformal film. The inventive structure contains a non-conformal film formed on both horizontal and vertical surfaces of a structure including at least non-predoped patterned gate regions.
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申请公布号 |
US6586289(B1) |
申请公布日期 |
2003.07.01 |
申请号 |
US20010882250 |
申请日期 |
2001.06.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOKUMACI OMER H.;DORIS BRUCE B. |
分类号 |
H01L21/8234;(IPC1-7):H01L21/823;H01L21/336;H01L21/425;H01L21/44;H01L21/823 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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