发明名称 |
Method for producing a semiconductor substrate |
摘要 |
A method for producing a semiconductor substrate includes the steps of: forming a first patterned mask containing a material having a growth suppressing effect on a substrate; growing a first nitride semiconductor on a portion of the substrate corresponding to an opening portion of the first patterned mask; forming a second patterned mask containing a material having a growth suppressing effect only on a main surface of the first nitride semiconductor which is positioned above the opening portion of the first patterned mask; and growing a semiconductor crystal substantially from the side surface of the first nitride semiconductor so as to form a second nitride semiconductor which integrally includes the first patterned mask and the second patterned mask.
|
申请公布号 |
US6586316(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20020087889 |
申请日期 |
2002.03.01 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TSUDA YUHZOH;ITO SHINGETOSHI;YANO SEIKI |
分类号 |
H01L21/20;H01L33/00;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|