| 摘要 |
The present invention is a method for end point detection where emission spectra are detected during etching of an object to be processed, such as a semiconductor wafer, by a spectrometer, and an end point of the etching is detected, comprising performing etching of a sample, corresponding to a product, prior to etching of a semiconductor wafer which is the product, sequentially measuring full-spectra of plasma, performing principal component analysis of the emission spectra using the emission intensities of all wavelengths of each of the full-spectra, holding the results as data, thereafter obtaining a principal component score for each of the full-spectra sequentially measured during etching of a semiconductor wafer to be manufactured on the basis of the emission intensities of all the wavelengths, and then detecting an end point of etching on the basis of a substantial change of the principal component score for each of the full-spectra sequentially measured.
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