发明名称 |
Accurate wafer patterning method for mass production |
摘要 |
A method for checking the position of alignment marks after a chemical mechanical polishing (CMP) process and automatically compensating for alignment of a wafer stepper based on the position checking is described. A wafer is provided having an alignment mark thereon for the purpose of aligning a reticle in the wafer stepper. The wafer is polished by CMP. Thereafter, alignment mark positioning is checked for deviation from a normal vectorial position of the alignment mark whereby information about the deviation is fed back to the wafer stepper and wherein the wafer stepper automatically compensates for correctable alignment error based on the deviation information.
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申请公布号 |
US6586143(B1) |
申请公布日期 |
2003.07.01 |
申请号 |
US20000619359 |
申请日期 |
2000.07.19 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
TAN JUAN BOON;TSE TAK YAN;RAPHAEL SAJAN MAROKKEY;GN FANG HONG |
分类号 |
G03F7/20;G03F9/00;H01L21/66;H01L23/544;(IPC1-7):G03F9/00;H01L21/302 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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