发明名称 |
Precursors for zirconium and hafnium oxide thin film deposition |
摘要 |
A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.
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申请公布号 |
US6586344(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20020261448 |
申请日期 |
2002.09.30 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHUANG WEI-WEI;EVANS DAVID R. |
分类号 |
C01G25/02;C01G27/02;C07F7/00;C23C16/40;C23C16/448;H01L21/00;H01L21/31;H01L21/314;H01L21/316;(IPC1-7):G01B5/33 |
主分类号 |
C01G25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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