发明名称 |
Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines |
摘要 |
Packaged power devices include an electrically conductive flange having a slot therein and an electrically conductive substrate mounted within the slot. A dielectric layer is provided on the electrically conductive substrate and a gate electrode strip line is patterned on the dielectric layer. The gate electrode strip line extends opposite the electrically conductive substrate. A vertical MOSFET is also provided. The vertical MOSFET has a source electrically coupled and mounted to a first portion of the flange located outside the slot and a gate electrode electrically coupled and mounted to a first end of the gate electrode strip line. |
申请公布号 |
US6586833(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20010992233 |
申请日期 |
2001.11.05 |
申请人 |
SILICON SEMICONDUCTOR CORPORATION |
发明人 |
BALIGA BANTVAL JAYANT |
分类号 |
H01L21/336;H01L23/552;H01L23/60;H01L23/66;H01L27/088;H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L23/34 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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