Method for depositing conformal nitrified tantalum silicide films by thermal CVD

摘要

Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF5 or TaCl5 precursor vapor with silane gas on a 250° C.-450° C. heated substrate, then exposing the tantalum silicide to a thermal NH3 treatment or an NH3- or N2-containing plasma treatment.