发明名称 BORON DOPED DIAMOND
摘要 A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 µm, or has a volume exceeding 1 mm 3 , or a combination of such characteristics.
申请公布号 AU2002366413(A1) 申请公布日期 2003.06.30
申请号 AU20020366413 申请日期 2002.12.13
申请人 ELEMENT SIX LIMITED 发明人 GEOFFREY, ALAN SCARSBROOK;PHILIP, MAURICE MARTINEAU;DANIEL, JAMES TWITCHEN;ANDREW, JOHN WHITEHEAD;MICHAEL, ANDREW COOPER;BARBEL, SUSANNE, CHARLOTTE DORN
分类号 C30B29/04;C23C16/27;C30B25/10 主分类号 C30B29/04
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