| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a low power device while a conventional complementary metal oxide semiconductor(CMOS) transistor is formed, by preventing a salicide layer from being formed in a source/drain of a specific transistor formation region while using a mask. CONSTITUTION: An oxide layer and a polysilicon layer are deposited on a substrate(11) having an isolation region and are selectively removed to form a gate electrode and a gate oxide layer. An insulation layer sidewall spacer is formed on the sidewall of the gate electrode and the gate oxide layer. Ions are implanted into the substrate at both sides of the insulation layer sidewall spacer to form a source/drain region. An insulation layer is deposited on the front surface of the substrate to sufficiently cover the gate electrode and the sidewall spacer. A predetermined thickness of the insulation layer is eliminated to expose the gate electrode. A mask that has a type to expose the gate electrode in a predetermined region is deposited on the insulation layer. The insulation layer in a region on which the mask is not deposited is eliminated and the mask is removed. A metal layer is deposited on the front substrate to form the salicide layer(20) on the exposed source/drain and the remaining metal layer is eliminated.
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