| 摘要 |
PURPOSE: A method for fabricating a low voltage flash memory is provided to generate low current and embody low power consumption through a low voltage by dividing the voltage applied to a conventional control gate and applying -8 volt to a control gate and +5 volt to a source so that the voltage across a gate and a channel becomes -13 volt. CONSTITUTION: Voltages of opposite polarities are applied to the control gate(19) and the source(or a gate) to implant electrons into a floating gate(17) through a program operation. Voltages of opposite polarities are applied to a silicon sub and the source(or a drain) to extract the electrons implanted into the floating gate through an erase operation.
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