| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve step coverage by using a PECVD(Plasma Enhanced CVD) oxide layer instead of a BPSG layer. CONSTITUTION: The first planarized layer made of a PECVD oxide layer is formed on a semiconductor substrate(11) with a lower pattern(12). The first photoresist layer is coated on the first planarized layer. The first planarization process is performed by etch-back of the first photoresist layer and the first planarized layer. The remaining photoresist layer is removed. The second planarized layer(13) composed of a PECVD oxide layer is formed on the first planarized layer. The second photoresist layer is coated on the second planarized layer. The second planarization process is performed by etch-back of the second photoresist layer and the second planarized layer. The remaining second photoresist layer is removed.
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