| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve insulating properties without forming voids by filling a trench using a silicon-rich oxide layer with a good gap-fill property. CONSTITUTION: The first mask pattern for covering a center portion of an isolation layer and the second mask pattern for exposing edge portions are formed on a substrate(11). A dual trench is formed by selectively etching the edge portions of the isolation region. The first mask pattern is removed and a desired portion of the substrate between the dual trenches is partially removed. Channel stop ions are implanted into the exposed substrate. An aluminum nitride layer(18) with good adhesive force is formed on the resultant structure including the dual trench. Then, a silicon-rich oxide layer is filled in the dual trench, thereby forming an isolation layer(20).
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