| 摘要 |
PURPOSE: A reflection mask for an EUV exposure device is provided, which is used to selectively reflect the EUV beam for patterning an arbitrary layer formed on a wafer and is improved in the resolution. CONSTITUTION: The reflection mask(50) comprises a first reflection layer(53) which is a multilayer formed on a substrate and reflects the EUV beam to the wafer; an absorption layer(55) which is formed on the first reflection layer, is patterned according to the designed shape to enable the some surface of the reflection layer to be exposed selectively, and absorbs the EUV beam; and a second reflection layer(59) which is formed between the first reflection layer and the absorption layer, selectively covers the exposed face of the first reflection layer to allow the thickness of the first reflection layer to be different partially, and reverses the phase of the EUV beam to make it be opposite to that of the first reflection layer for reflecting the EUV beam to the wafer. Preferably the second reflection layer(59) is a layered structure of a silicon layer(58) and a molybdenum layer(57). |
