发明名称 LASER IRRADIATION APPARATUS, AND METHOD FOR PROCESSING SEMICONDUCTOR THIN FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser irradiation apparatus capable of moving an optical pattern formed with interference action of laser light at a high frequency, and hereby of speeding up a processing speed. <P>SOLUTION: The laser irradiation apparatus comprises laser light generation means 101, splitting means 104 for splitting laser light H generated from the laser light generation means 101, optical interference means 106 for forcing a first light bundle h1 of the laser light H splitted by the splitting means 104 and a second light bundle h2 to interfere with each other, and to form a periodical optical pattern Hp, and a phase shift means 105 for phase shifting the first light bundle h1 electro-optically. The laser light generation means 101 is a pulsed oscillation laser excited by a laser diode. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003178982(A) 申请公布日期 2003.06.27
申请号 JP20020267845 申请日期 2002.09.13
申请人 SONY CORP 发明人 ASANO AKIHIKO
分类号 G02B26/06;G02F1/03;G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;H01S3/094;H01S3/10;(IPC1-7):H01L21/20 主分类号 G02B26/06
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