| 摘要 |
PROBLEM TO BE SOLVED: To enable the optimum operation of an IGDT by being adapted to the characteristics of the IGDT. SOLUTION: An integrated gate dual transistor (IGDT) is equipped with controllable gates (G1 and G2), a first gate (G1) that is supplied to a cathode side and at the same time is driven by a first gate current via a first gate terminal having low inductance, and a second gate (G2) that is supplied to an anode side and at the same time is driven by a second gate current via a second gate terminal with low inductance. In the switch-off operation of the IGDT, the rate of rising in the voltage of the IGDT is restricted via the two gates. The restriction of the rate of rising in the voltage of the IGDT prevents the voltage from being increased at a different speed in the series circuit of the IGDT, thus preventing the overheat and breakdown of each IGDT due to a nonuniform load. COPYRIGHT: (C)2003,JPO
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