| 摘要 |
PURPOSE: A data storing device is provided to be capable of improving the characteristics of a magnetic memory device by including first and second ferromagnetic layers. CONSTITUTION: In the data storage device(610), an array (612) of magnetic memory cells(10), each memory cell(10) including a data ferromagnetic layer and a reference ferromagnetic layer; a plurality of first traces(614) extending in a first direction, each first trace(614) being in contact with a group of data layers; and a plurality of structures(616) extending in a second direction, each structure(616) forming closed flux paths with a group of reference layers. In the device, the ferromagnetic layers have magnetizations that are switched between first and second directions during write operations, only the reference layers being switchable between first and second directions during read operations.
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