发明名称 |
CELL SUBSTITUTION CIRCUIT FOR SUBSTITUTING DEFECT CELL WITH NORMAL CELL IN SEMICONDUCTOR MEMORY MODULE AND SEMICONDUCTOR MEMORY MODULE USING THE SAME |
摘要 |
PURPOSE: A cell substitution circuit for substituting a defect cell with a normal cell in a semiconductor memory module and a semiconductor memory module using the same are provided to recover a bad unit chip by performing selectively an anti-fuse programming operation for the bad unit chip. CONSTITUTION: A cell substitution circuit(202) is used for substituting a defect cell with a normal cell in a semiconductor memory module which is formed with a plurality of packages. The cell substitution circuit includes a defect recovery address storage portion(204) and a fuse portion(206). The defect recovery address storage portion receives and stores a defect recovery address through a dedicated pin of a corresponding package from the outside. The fuse portion substitutes the defect cell with the normal cell by using the defect recovery address of the defect recovery address storage portion.
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申请公布号 |
KR20030052659(A) |
申请公布日期 |
2003.06.27 |
申请号 |
KR20010082682 |
申请日期 |
2001.12.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KOO, BON SEONG |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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