发明名称 CELL SUBSTITUTION CIRCUIT FOR SUBSTITUTING DEFECT CELL WITH NORMAL CELL IN SEMICONDUCTOR MEMORY MODULE AND SEMICONDUCTOR MEMORY MODULE USING THE SAME
摘要 PURPOSE: A cell substitution circuit for substituting a defect cell with a normal cell in a semiconductor memory module and a semiconductor memory module using the same are provided to recover a bad unit chip by performing selectively an anti-fuse programming operation for the bad unit chip. CONSTITUTION: A cell substitution circuit(202) is used for substituting a defect cell with a normal cell in a semiconductor memory module which is formed with a plurality of packages. The cell substitution circuit includes a defect recovery address storage portion(204) and a fuse portion(206). The defect recovery address storage portion receives and stores a defect recovery address through a dedicated pin of a corresponding package from the outside. The fuse portion substitutes the defect cell with the normal cell by using the defect recovery address of the defect recovery address storage portion.
申请公布号 KR20030052659(A) 申请公布日期 2003.06.27
申请号 KR20010082682 申请日期 2001.12.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KOO, BON SEONG
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
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