| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to reduce dark current and to improve saturation property by forming a p0 region using a buffer layer. CONSTITUTION: A gate electrode(44) is formed on a semiconductor layer(41) having a field oxide layer(42). An n- doping region(45) is formed in the semiconductor layer(41) to arrange one edge of the gate electrode and edge of the field oxide layer. A spacer(46) is formed at both sidewalls of the gate electrode. A floating diffusion region(47) is formed in the semiconductor layer to arrange the spacer located at the other side of the gate electrode. A buffer layer(48) is formed on the resultant structure adjacent to the field oxide layer(42). Then, a p0 doping region(50) is formed on the n- doping region(45) to surround the field oxide layer.
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