| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the flat surface size of the peripheral circuit section of a memory cell or logic is reduced and wiring resistances are lowered, and then, the degrees of freedom for layout of wiring formed on an interlayer insulating film are ensured, and to provide a method of manufacturing the device. <P>SOLUTION: This semiconductor device is provided with active regions 8 in transistors formed on a semiconductor substrate 1, wiring 54 formed on the substrate 1, the interlayer insulating film 9 covering the active regions 4 and wiring 54. This device is also provided with plug wiring 15 and 15a formed to overlap both the wiring 54 and active regions 8 through the interlayer insulating film 9 when viewed in a plan view of this device. The plug wiring 15 and 15a electrically connects the wiring 54 and active regions 8 to each other. <P>COPYRIGHT: (C)2003,JPO |
