发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method which can restrict the occurrence of a step for ensuring the planarity of the lower electrode of a capacitor, and can stabilize capacitor characteristics. <P>SOLUTION: There are provided a basic conductive film 51; an interlayer insulating film 52 which has an interlayer film contact hole and is formed on an upper surface of the basic conductive film 51; an adhesive layer 54 which has an adhesion layer contact hole continuous to the interlayer film contact hole and is formed on an upper surface of the interlayer insulating film; a connection part 200 which is connected to the basic conductive film 51 and is formed by flattening in conformity with the upper surface of the adhesion layer 54, in a composite contact hole composed of the interlayer film contact hole and the adhesion layer contact hole; and a capacitor equipped with first electrodes 57, 58, a dielectric film 59 and a second electrode 60 formed on the upper surface of the connection part 200 and the adhesion layer 54. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179164(A) 申请公布日期 2003.06.27
申请号 JP20020265456 申请日期 2002.09.11
申请人 HYNIX SEMICONDUCTOR INC 发明人 KWEON SOON YONG;YEOM SEUNG-JIN;SAI INSEKI;SEONG JIN-YONG
分类号 H01L21/768;H01L21/02;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L31/0328;H01L31/062 主分类号 H01L21/768
代理机构 代理人
主权项
地址