| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN semiconductor laser element whose threshold current value and operation voltage are lower than a conventional air-ridge type GaN semiconductor laser element. SOLUTION: The GaN semiconductor laser element 60 has a laminated structure in which an n-AlGaN clad layer 64, an n-GaN guide layer 66, an InGaN quantum well active layer 68, a p-GaN guide layer 70, a p-AlGaN clad layer 72, and a p-GaN contact layer 74 are laminated on an n-type GaN substrate 62 having a ridge structure 61 in <1-100>±10°direction, with (11-20) surface as a main surface. An n-clad layer is composed of an upper surface part 64a having (0001) surface, a slope part 64b having a slope of (11-22) surface, and a flat part 64c extending along (11-20) surface from the lower end of the tilted part, with a ridge structure embedded. The n-guide layer, active layer, p-guide layer, and p-clad layer are formed into the same shape along the n-clad layer. A p-side electrode 78 is formed on the p-GaN contact layer. COPYRIGHT: (C)2003,JPO
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