| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus that prevents aluminum fluoride from being generated due to the reaction between a cleaning gas containing fluorine and the susceptor of aluminum. SOLUTION: A deposition is performed by the plasma CVD apparatus 1 where a thin plate 31 made of aluminum oxide of fluorine gas inclusion resistance properties is overlapped to the upper surface of a susceptor 14 of aluminum. More specifically, a TEOS gas and an O<SB>2</SB>gas are introduced into a deposition chamber 11 as a feed gas, and plasma is developed for forming an SiO<SB>2</SB>film on a glass substrate G. Even if a given number of films are formed, and then an NF<SB>3</SB>gas is introduced to the deposition chamber 11 as the cleaning gas, aluminum fluoride is not generated, and hence adherence to the susceptor 14 and a shower plate 16 is prevented, thus forming the SiO<SB>2</SB>film having uniform film thickness, and preventing contamination due to an AF<SB>3</SB>particle from being generated. COPYRIGHT: (C)2003,JPO
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