METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing etchant and cleaning chemical from penetrating into an anti-reflective coating by forming a protecting layer on the anti-reflective coating. CONSTITUTION: After forming an interlayer dielectric(101) on a semiconductor substrate(10), a contact hole(103) is formed by selectively etching the interlayer dielectric. After filling the contact hole with a barrier metal layer(104) and a tungsten plug(105), an aluminium layer(120) is formed on the resultant structure. An anti-reflective coating(130) made of a Ti layer(131) and a TiN layer(133) is deposited on the aluminium layer. A protecting layer(140) made of a TiON layer is then formed on the anti-reflective coating by an RTP(Rapid Thermal Processing) method at the temperature of 100-350°C under N2 atmosphere.