| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the characteristics of a gate and a silicide layer by forming a diffusion barrier layer using a silicon nitride layer. CONSTITUTION: After forming a gate electrode(106) on a semiconductor substrate(100), an insulating spacer(110) is formed at both sidewalls of the gate electrode. A silicon nitride layer(120) is formed on the entire surface of the resultant structure. A source/drain region(132) is formed by implanting doped dopants into the resultant structure using the gate electrode and insulating spacer as a mask. A heat treatment is carried out at the resultant structure. After removing the silicon nitride layer, a silicide layer is formed on the gate electrode and source/drain region.
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