发明名称 METHOD FOR MEASURING THICKNESS OF FILM ON SUBSTRATE
摘要 FIELD: processes for measuring thickness of film on substrate. SUBSTANCE: method comprises steps of irradiating surface of substrate with optical irradiation; readjusting wave length of irradiation; registering signal reflected from surface for further analysis of dependence of intensity of reflected signal from wave length defining film thickness; approximating dependence of reflected signal intensity from wave length by function representing reflection coefficient of three-layer system "air - film material -substrate material"; calculating approximated parameters and determining film thickness according to parameters of approximating function. EFFECT: lowered possibility of error occurring while measuring at condition influenced by inner and outer noises. 1 dwg, 1 tbl
申请公布号 RU2207501(C2) 申请公布日期 2003.06.27
申请号 RU20010117702 申请日期 2001.06.29
申请人 KI I LAZERNOJ TEKHNIKI MOSKOVSKOGO GOSUDARSTVENNOG;TEKHN UNI IM N EH BAUMANA O;NII RADIOEHLEKTRONI 发明人 BELOV M.L.;BEREZIN S.V.;GORODNICHEV V.A.;KOZINTSEV V.I.;STRELKOV B.V.
分类号 G01B11/06;(IPC1-7):G01B11/06 主分类号 G01B11/06
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