发明名称 |
METHOD FOR MEASURING THICKNESS OF FILM ON SUBSTRATE |
摘要 |
FIELD: processes for measuring thickness of film on substrate. SUBSTANCE: method comprises steps of irradiating surface of substrate with optical irradiation; readjusting wave length of irradiation; registering signal reflected from surface for further analysis of dependence of intensity of reflected signal from wave length defining film thickness; approximating dependence of reflected signal intensity from wave length by function representing reflection coefficient of three-layer system "air - film material -substrate material"; calculating approximated parameters and determining film thickness according to parameters of approximating function. EFFECT: lowered possibility of error occurring while measuring at condition influenced by inner and outer noises. 1 dwg, 1 tbl
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申请公布号 |
RU2207501(C2) |
申请公布日期 |
2003.06.27 |
申请号 |
RU20010117702 |
申请日期 |
2001.06.29 |
申请人 |
KI I LAZERNOJ TEKHNIKI MOSKOVSKOGO GOSUDARSTVENNOG;TEKHN UNI IM N EH BAUMANA O;NII RADIOEHLEKTRONI |
发明人 |
BELOV M.L.;BEREZIN S.V.;GORODNICHEV V.A.;KOZINTSEV V.I.;STRELKOV B.V. |
分类号 |
G01B11/06;(IPC1-7):G01B11/06 |
主分类号 |
G01B11/06 |
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