发明名称 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition having high sensitivity to an energy beam and forming a resist pattern free of thinning and surface deformation to T shape with time from exposure to heating even in a pattern forming process including a post-exposure baking step at a high temperature and to provide a pattern forming method and a pattern. <P>SOLUTION: The chemically amplified positive resist composition comprises an acid generator (A) comprising an onium cation and a borate anion of the formula [BY<SB>m</SB>Z<SB>n</SB>]<SP>-</SP>(where Y is F or Cl; Z is phenyl substituted by at least two electron withdrawing groups selected from F, cyano, nitro and trifluoromethyl; m is an integer of 0-3; n is an integer of 1-4; and m+n=4), a polymer (B) having an acid-labile group and an organic solvent (C). <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177518(A) 申请公布日期 2003.06.27
申请号 JP20010375158 申请日期 2001.12.10
申请人 TOYO INK MFG CO LTD 发明人 ARISHIMA MASASHI;UESUGI TAKAHIKO
分类号 G03F7/004;C07C381/12;C07F5/02;G03F7/039;H01L21/027 主分类号 G03F7/004
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