| 摘要 |
PROBLEM TO BE SOLVED: To simplify a process for removing scum and a residual organic constituent that are generated when a desired contact hole is formed by allowing an interlayer dielectric formed on a semiconductor substrate to be subjected to wet etching. SOLUTION: In the manufacturing method of a semiconductor device, when an interlayer dielectric 2 formed on a semiconductor substrate 1 is subjected to wet etching to forma a desired contact hole, a process is provided as the preprocess of the wet etching process. In the process, the surface of the interlayer dielectric 2 is washed by ozone water having a concentration of approximately 20 to 60 ppm, and scum and residual organic constituent are removed. COPYRIGHT: (C)2003,JPO |
