| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of selectively annealing a predetermined device alone out of a plurality of devices formed on the same wafer. CONSTITUTION: A plurality of devices are formed on a semiconductor substrate(101), wherein the device formed region is divided into a thermal processing object region(B) and a thermal processing non-object region(A). After sequentially forming an etching stop layer(102), a capping layer(103), and a metal layer(104) on the semiconductor substrate(101), a photoresist pattern is formed by depositing and patterning a photoresist layer. The metal layer(104) and the capping layer(103) of the thermal processing object region(B) are selectively patterning using the photoresist pattern as a mask. A heat treatment is carried out at the resultant structure.
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