| 摘要 |
PURPOSE: A bipolar transistor is provided to be capable of dispersing the current density of an emitter electrode while conserving high frequency characteristic and improving electrostatic discharge level by improving the structure of the bipolar transistor. CONSTITUTION: A collector region is formed by implanting the first conductive-type dopants in a semiconductor substrate(11). An inner base region(13) is formed at the upper portion of the semiconductor substrate by lightly implanting the second conductive-type dopants. An emitter region(16) is formed at the upper portion of the inner base region by implanting the first conductive-type dopants, wherein the emitter region is formed at the first region. An outer base region(15) having 0.6-1 times larger depth than that of the emitter region, is formed at the upper portion of the inner base region by heavily implanting the second conductive-type dopants, wherein the outer base region is formed at the second region. A collector electrode is formed on the lower portion of the semiconductor substrate. An emitter electrode(14) is formed on the upper portion of the emitter region(16). A base electrode(17) is formed on the upper portion of the outer base region(15). Preferably, the base electrode includes at least the upper surface of the outer base region.
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