| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the barrier characteristic of a metal barrier by carrying out a plasma process on the barrier metal formed on the inner wall of a contact or via hole. CONSTITUTION: A barrier metal(13) is formed on the inner wall of a contact or via hole(11). A plasma process is carried out on the barrier metal(13) in the state of supplying electric and magnetic field, wherein the electric and magnetic field intersect with each other. Preferably, the barrier metal is formed by carrying out a CVD(Chemical Vapor Deposition) using TiN. Preferably, the electric field is supplied toward the vertical direction of the surface of a wafer, and the magnetic field is supplied toward the horizontal direction of the surface of the wafer.
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