METHOD FOR MANUFACTURING LOW TEMPERATURE POLYSILICON THIN FILM USING METAL INDUCED CRYSTALLIZATION

摘要

PURPOSE: A method for manufacturing a low temperature polysilicon thin film using a metal induced crystallization is provided to be capable of reducing inner defects and improving the characteristics of the low temperature polysilicon thin film by optimally controlling the thickness of an amorphous silicon thin film. CONSTITUTION: The first insulating layer(11) is formed on a substrate(10). An amorphous silicon thin film(12) having a thickness of 30-100 nm, is formed on the first insulating layer(11). A metal layer(13) is formed on the amorphous silicon thin film(12). The amorphous silicon thin film(12) is transformed into a polysilicon thin film by carrying out a heat treatment at the resultant structure. Preferably, the heat treatment is carried out at the temperature of 450-550°C.