| 摘要 |
PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to be capable of preventing the penetration of boron and improving the thermal stability of cobalt salicide by carrying out a heat treatment after implanting germanium ions into a polysilicon layer. CONSTITUTION: After sequentially depositing a gate oxide layer(2) and a polysilicon layer(3) on a semiconductor substrate(1), the polysilicon layer is partially transformed into an amorphous polysilicon layer by implanting germanium ions into the polysilicon layer. The amorphous polysilicon layer is recrystalized by carrying out a heat treatment. At this time, a large grain polysilicon layer(5) is formed. Preferably, the ion implantation is carried out by using a dose of 1E15-1E16/cm2 at the energy range of 30-100 KeV. The amorphous polysilicon layer has a thickness of 400-1100 angstrom. Preferably, an RTP(Rapid Thermal Process) or a thermal annealing process are used as the heat treatment.
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