METHOD FOR FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact plug of a semiconductor device is provided to be capable of stably securing the contact resistance of the device by forming micro-size contact plug. CONSTITUTION: After forming an interlayer dielectric(11) on a substrate, the first contact hole is formed by selectively etching the interlayer dielectric. The second contact hole is formed by forming a high temperature oxide layer(13) on the entire surface of the resultant structure. After depositing a photoresist layer on the resultant structure, the interlayer dielectric is exposed by polishing the resultant structure. After selectively removing the photoresist layer and high temperature oxide layer, an diffusion barrier layer(16) and a metal line layer(17) are sequentially formed on the resultant structure. Preferably, the second contact hole has a width of 0.05-0.30 μm.