METHOD FOR FORMING TRENCH OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a trench of a semiconductor device is provided to be capable of securing stable contact resistance and improving the reliability of the device by forming a micro-size trench. CONSTITUTION: After forming an interlayer dielectric(12) on a substrate(11), the first trench is formed by selectively removing the interlayer dielectric. The second trench is formed by depositing a high temperature oxide layer(14) on the entire surface of the resultant structure. After depositing a photoresist layer on the resultant structure, the interlayer dielectric is exposed by carrying out a CMP(Chemical Mechanical Polishing) process. After selectively removing the photoresist layer and high temperature oxide layer, an diffusion barrier layer(17) and a metal line layer(18) are sequentially deposited on the resultant structure.