| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a field effect transistor which has excellent high-frequency characteristics by suppressing the formation of a surface oxide layer and the occurrence of a metal contamination or the like by exposing the surface of a GaAs layer with the air and keeping the surface of the GaAs layer clean and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a recess 2a on the surface of the GaAs active layer 2, then forming an organic film 10a made of, for example, a dioctyl phthalate on the entire surface, and coating on the exposed surface of the GaAs active layer. COPYRIGHT: (C)2003,JPO
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