发明名称 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which improves the profile of a resist pattern and suppresses a variation of line width due to laying in a vacuum chamber. <P>SOLUTION: The positive resist composition for an electron beam, X-rays or EUV (extreme-ultraviolet radiation) comprises (a) a resin which has a structural unit containing an acid-decomposable group of formula (X) and is decomposed by the action of an acid to increase solubility in an alkali developer and (b) a compound which generates an acid upon irradiation with an actinic radiation. In formula (X), R<SB>1</SB>and R<SB>2</SB>may be the same or different and are each H or a 1-4C alkyl; W is a divalent organic group; and R<SB>3</SB>is an alkyl which may have substituents and has 11-20 carbon atoms in total, an aryl which may have substituents and has 11-30 carbon atoms in total or an aralkyl which may have substituents and has 12-30 carbon atoms in total. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177537(A) 申请公布日期 2003.06.27
申请号 JP20020060583 申请日期 2002.03.06
申请人 FUJI PHOTO FILM CO LTD 发明人 MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO;SHIRAKAWA KOJI;TAKAHASHI AKIRA;FUJIMORI TORU
分类号 G03F7/039;C08F12/14;H01L21/027 主分类号 G03F7/039
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