发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT AND OXIDIZING FURNACE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element which confines a current in a specified region by strictly controlling the amount of oxidation of a semiconductor layer for selective oxidation, and an oxidizing furnace which can control the amount of oxidation of the semiconductor layer for selective oxidation. SOLUTION: A specimen mounting stand 2 is installed in a chamber 1 wherein a monitoring window 5 is formed on an upper surface side. A heater 3 for heating a specimen 10 is installed in the vicinity of the mounting stand 2. Outside the window 5 of the chamber 1, a microscope 11, a camera 12 and a TV monitor 13 are connected and installed. The microscope 11 is so installed that the focus is taken on a specified layer of the specimen 10 and observation is enabled. The manufacturing method performs oxidizing process while observing oxidation progress of the specified layer (semiconductor layer for selective oxidation) of the specimen 10. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179309(A) 申请公布日期 2003.06.27
申请号 JP20010379722 申请日期 2001.12.13
申请人 ROHM CO LTD 发明人 SAI HIRONOBU
分类号 H01L21/66;H01L21/00;H01L21/316;H01S5/183;H01S5/343;(IPC1-7):H01S5/183 主分类号 H01L21/66
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