| 摘要 |
PROBLEM TO BE SOLVED: To relieve stresses generated in between a silicon oxide film forming dielectric separation and a silicon layer forming a device in a dielectric separation structure formed on an SOI substrate. SOLUTION: In the dielectric separation structure formed on the SOI substrate polysilicon layers 5 are formed on the sidewalls of an element-separating groove 4. After the polysilicon layers 5 are formed, the groove 4 is filled with a silicon oxide 6. COPYRIGHT: (C)2003,JPO
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