HIGH ELECTRON MOBILITY TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a GaN high electron mobility transistor having a high electron mobility of an electron transit layer. SOLUTION: The high electron mobility transistor comprises the electron transit layer made of a GaN compound semiconductor layer, and an electron supply layer made of a GaN compound semiconductor layer having a larger band gap energy than that of the electron transit layer in such a manner that the electron transit layer contains an In of 1×1019to 5×1020cm-3. Or, the electron transit layer contains an As or P of 1×1019to 5×1020cm-3. COPYRIGHT: (C)2003,JPO