PREPARING METHOD OF SILICON CARBIDE SINGLE CRYSTAL SURFACE OXIDE FILM USING ULTRA-HIGH TEMPERATURE WATER VAPOR

摘要

PROBLEM TO BE SOLVED: To provide a method for oxidizing the surface of a silicon carbide single crystal in a water vapor atmosphere especially exceeding 1200°C for a method for preparing the semiconductor device of metal, an oxide film, and a semiconductor structure (MOS structure) with the silicon carbide single crystal as a substrate. SOLUTION: Oxygen flows inside a reaction tube that is heated at a high temperature, hydrogen is discharged from a narrow nozzle in the inside for generating plasma flame, the surface of a silicon carbide single crystal is oxidized in a water vapor atmosphere that is generated by the plasma flame and exceeds 1200°C, and a high-quality oxide film having less residual carbon atoms is fabricated on the surface. COPYRIGHT: (C)2003,JPO