发明名称 MULTILAYER FILM, INSULATING FILM, AND SUBSTRATE FOR SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To obtain a multilayer film for a semiconductor having superb coherency with a CVD film in a semiconductor device or the like. SOLUTION: In the multilayer film, a film where a hydrolysis condensation product is heated is layered. In this case, the hydrolysis condensation product is obtained by allowing (A) an organic compound film where content of carbon is equal to 60 wt.% or more, and (B) at least one kind of compound that is selected from a group of compounds that are shown by the following general expressions (1) to (4) to be subjected to hydrolysis and condensation. The above general expressions include (1) HSi(OR<SP>51</SP>)<SB>3</SB>(In this case, OR<SP>51-57</SP>indicates a monovalent organic group.), (2) R<SB>a</SB>'Si(OR<SP>52</SP>)<SB>4-a</SB>' (In this case, R indicates a fluorine atom or the monovalent organic group, and a' indicates integers of 1 to 2.), (3) Si(OR<SP>53</SP>)<SB>4</SB>, and (4) R<SP>54</SP><SB>b</SB>(R<SP>55</SP>O)<SB>3-b</SB>'Si-(R<SP>58</SP>)<SB>d</SB>'-Si(OR<SP>56</SP>)<SB>3-c</SB>'R<SP>57</SP><SB>c</SB>' (In this case, b' and c' are the same or different and integers of 0 to 2, R<SP>58</SP>is an oxygen atom, a phenylene group, or a group that is expressed by -(CH<SB>2</SB>)<SB>n</SB>' (In this case, n' is integers of 1 to 6, and n' indicates 0 or 1). COPYRIGHT: (C)2003,JPO
申请公布号 JP2003179046(A) 申请公布日期 2003.06.27
申请号 JP20020272119 申请日期 2002.09.18
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;PATZ MATTHIAS;SEKIGUCHI MANABU;SHIODA ATSUSHI;YAMADA KINJI
分类号 H01L21/312;(IPC1-7):H01L21/312 主分类号 H01L21/312
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